发明名称 Technique for forming embedded metal lines having increased resistance against stress-induced material transport
摘要 An alloy forming dopant material is deposited prior to the formation of a copper line, for instance by incorporating the dopant material into the barrier layer, which is then driven into the vicinity of a weak interface by means of a heat treatment. As indicated by corresponding investigations, the dopant material is substantially transported to the weak interface through grain boundary regions rather than through the bulk copper material (copper grains), thereby enabling moderately high alloy concentrations in the vicinity of the interface while maintaining a relatively low overall concentration within the grains. The alloy at the interface reduces electromigration along the interface.
申请公布号 US2005161817(A1) 申请公布日期 2005.07.28
申请号 US20040009575 申请日期 2004.12.10
申请人 MEYER MORITZ-ANDREAS;ENGELMANN HANS-JUERGEN;ZSCHECH EHRENFRIED;HUEBLER PETER 发明人 MEYER MORITZ-ANDREAS;ENGELMANN HANS-JUERGEN;ZSCHECH EHRENFRIED;HUEBLER PETER
分类号 H01L21/44;H01L21/4763;H01L21/768;H01L23/52;H01L23/532;H01L29/40;(IPC1-7):H01L21/476 主分类号 H01L21/44
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