发明名称 |
Method of operating a stacked spin based memory |
摘要 |
A method of operating a spin based memory cell stacked architecture is provided. The cells are comprised of magnetic spin storage elements stacked on top of each other on a silicon substrate, as well as one or two semiconductor FET isolation elements.
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申请公布号 |
US2005162903(A1) |
申请公布日期 |
2005.07.28 |
申请号 |
US20050086603 |
申请日期 |
2005.03.21 |
申请人 |
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发明人 |
JOHNSON MARK B. |
分类号 |
G01R33/06;G11B5/37;G11C7/00;G11C11/00;G11C11/16;G11C11/18;G11C11/56;H01L27/22;H01L29/66;H01L43/06;H03K19/18;(IPC1-7):G11C11/00 |
主分类号 |
G01R33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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