| 摘要 |
The invention relates to a transistorised radio frequency (RF) amplifier coupling device, comprising a resonant electromagnetic cavity (20, 60) to carry out the coupling of said amplifiers, the cavity being provided with a RF power inlet (64) and at least as many RF inlets (Cl, C3) as amplifiers for coupling. The above is of application to the coupling of transistorised power amplifiers. |
