Production process for a trench transistor uses high energy implant to form a drain drift region into which the base of the trench extends

摘要

A production process for a trench transistor comprises forming an epilayer (11), trench (14), gate dielectric (15) and gate electrode (16) with the transistor in an n-substrate (10) and with a p-body region (20) by the trench and an n-source (13). An n-drift drain (12) is formed by high-energy implant and the base of the trench projects into this region. An independent claim is also included for a trench transistor formed as above.