METHOD FOR FABRICATING NONVOLATILE SEMICONDUCTOR MEMORY

摘要

PROBLEM TO BE SOLVED: To provide a method for forming a nonvolatile memory element during an wiring process for facilitating high integration by lamination and change of design when a nonvolatile memory element having a variable resistor composed of a perovskite metal oxide film is fabricated in a semiconductor integrated circuit, and a method for fabricating a nonvolatile memory element by a low temperature process without causing any thermal damage in the wiring process.

SOLUTION: In the method for fabricating a nonvolatile semiconductor memory comprising a variable resistance element having a variable resistor composed of a perovskite metal oxide film, the variable resistor 8 is formed at a formation temperature lower than the melting point of a metal wiring layer 11 formed prior to formation of the variable resistor 8. More preferably, a praseodymium calcium manganese oxide represented by a general formula Pr1-xCaxMnO3is deposited as the variable resistor 8 by sputtering at a deposition temperature in the range of 350°C-500°C.

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