IMPROVED METHOD FOR PROGRAMMING ELECTRON ON FLOATING GATE OF NONVOLATILE MEMORY CELL

摘要

PROBLEM TO BE SOLVED: To provide a method for improving the programming efficiency of a nonvolatile memory cell which has a floating gate for storing electrons. SOLUTION: The method for programming the cell includes a step for forming an inversion layer in a second part of a channel. An electron flow is generated in a drain region which adjoins the inversion layer, and the electron flow reaches a pinch-off point passing through the inversion layer. The electrons are accelerated through a depletion layer by a magnetic line of force from the floating gate with little dispersion or without the dispersion. Thereby, the electrons are accelerated through an insulator making the floating gate separate from a substrate, and the electrons are injected into the floating gate. COPYRIGHT: (C)2005,JPO&NCIPI