发明名称 |
Method for forming interconnection line in semiconductor device and interconnection line structure |
摘要 |
Methods for forming an interconnection line and interconnection line structures are disclosed. The method includes forming an interlayer insulating layer on a semiconductor substrate, wherein the interlayer insulating layer is formed of a carbon-doped low-k dielectric layer. An oxidation barrier layer is formed on the interlayer insulating layer. An oxide capping layer is formed on the oxidation barrier layer. A via hole is in the oxide capping layer, the oxidation barrier, and the interlayer insulating layer. A conductive layer pattern is formed within the via hole.
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申请公布号 |
US2005161821(A1) |
申请公布日期 |
2005.07.28 |
申请号 |
US20050028515 |
申请日期 |
2005.01.04 |
申请人 |
LEE KYOUNG-WOO;SHIN HONG-JAE;KIM JAE-HAK;WEE YOUNG-JIN;LEE SEUNG-JIN;PARK KI-KWAN |
发明人 |
LEE KYOUNG-WOO;SHIN HONG-JAE;KIM JAE-HAK;WEE YOUNG-JIN;LEE SEUNG-JIN;PARK KI-KWAN |
分类号 |
H01L21/28;H01L21/768;H01L23/522;(IPC1-7):H01L21/476;H01L21/44;H01L23/48;H01L29/40 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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