DILUTED MAGNETIC SEMICONDUCTOR NANOWIRES EXHIBITING MAGNETORESISTANCE

摘要

A method for is disclosed for fabricating diluted magnetic semiconductor (DMS) nanowires by providing a catalyst-coated substrate and subjecting at least a portion of the substrate to a semiconductor, and dopant via chloride-based vapor transport to synthesize the nanowires. Using this novel chloride-based chemical vapor transport process, single crystalline diluted magnetic semiconductor nanowires Ga1-xMnxN (x=0.07) were synthesized. The nanowires, which have diameters of ~ 10 nm to 100 nm and lengths of up to tens of micrometers, show ferromagnetism with Curie temperature above room temperature, and magnetoresistance up to 250 Kelvin.