<p>An ambipolar, light-emitting transistor comprising an organic semiconductive layer in contact with an electron injecting electrode and a hole injecting electrode separated by a distance L defining the channel length of the transistor, in which the zone of: the organic semiconductive layer from which the light is emitted is located more than L/10 away from both the electron as well as the hole injecting electrode.</p>
申请公布号
WO2005069400(A1)
申请公布日期
2005.07.28
申请号
WO2005GB00130
申请日期
2005.01.17
申请人
CAMBRIDGE UNIVERSITY TECHNICAL SERVICES LIMITED;ZAUMSEIL, JANA;SIRRINGHAUS, HENNING;CHUA, LAY-LAY;HO, PETER, KIAN-HOON;FRIEND, RICHARD, HENRY
发明人
ZAUMSEIL, JANA;SIRRINGHAUS, HENNING;CHUA, LAY-LAY;HO, PETER, KIAN-HOON;FRIEND, RICHARD, HENRY