| 摘要 |
FIELD: microelectronics. ^ SUBSTANCE: proposed method that can be used for photolytic etching of wafers in the course of manufacture of very large-scale integrated circuit includes etching of SiO2 surface in sulfur hexafluoride under action of vacuum ultraviolet emission of deuterium-vapor lamp. Argon is introduced in addition into etching gas. ^ EFFECT: enhanced selectivity of silicon dioxide etching with respect to monocrystalline and polycrystalline silicon. ^ 3 cl, 1 tbl |
