Siloxane-based Resin containing Germanium and Method of Semiconductor Interlayer Insulating Film Using the Same

摘要

Disclosed herein are a siloxane-based resin having germanium and an interlayer insulating film for a semiconductor device formed using the same. The siloxane-based resins have so low dielectric constant in addition to excellent mechanical properties that they are useful materials for an insulating film between interconnect layers of a semiconductor device.