发明名称 FORCE KEY ON MIS-TRANSISTOR
摘要 FIELD: electric engineering. ^ SUBSTANCE: transformer 5 is made with additional branches 13, 14 forming two additional windings relatively to edge outputs, while each branch 13 and 14 through resistor 11 and 12 is connected to transistor base 1 and 2, emitter of which is connected to edge output 8 and 9 of same additional winding. Collector-emitter links of transistor 1 and 2 are linked by diodes 3 and 4 in locking direction. Collector of transistor 1 is connected to latch, and collector 2 - to source of MIS transistor. ^ EFFECT: higher reliability, higher efficiency. ^ 1 dwg
申请公布号 RU2257668(C1) 申请公布日期 2005.07.27
申请号 RU20040102927 申请日期 2004.02.02
申请人 发明人 SOKOLOV M.I.;MIKHEEV P.V.;RUDENKO V.N.
分类号 H03K17/567;H02M7/537;H03K17/691 主分类号 H03K17/567
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