发明名称 Solid state imaging device and driving method thereof
摘要 A solid state imaging device of the present invention comprises a solid state imaging element which includes a plurality of photoelectric conversion elements arranged in a matrix. In the solid state imaging device of the present invention, a pixel mixture unit area includes q pixels (q is a natural number equal to or greater than 2) in the first direction of the solid state imaging element and p pixels (p is a natural number equal to or greater than 2) in the second direction that crosses the first direction. The solid state imaging device includes: means for performing a first-field pixel addition process of adding together electric charges of a plurality of pixels included in the plurality of pixel mixture unit areas and a second-field pixel addition process of adding together the electric charges of the plurality of pixels included in the plurality of pixel mixture unit areas based on a combination of the pixel mixture unit areas which is different from that of the first-field pixel addition process; and means for alternately outputting signals of the electric charges obtained in the first-field pixel addition process and second-field pixel addition process as signals for interlaced scanning. <IMAGE>
申请公布号 EP1558023(A2) 申请公布日期 2005.07.27
申请号 EP20050001015 申请日期 2005.01.19
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 SHIMIZU, IZUMI;FUJII, TOSHIYA;IMAMURA, KUNIHIRO;ITAKURA, KEIJIROU
分类号 H01L27/14;H04N3/15;H04N5/335;H04N9/04;(IPC1-7):H04N3/15 主分类号 H01L27/14
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