| 发明名称 |
A Group III nitride crystal substrate manufacturing method |
| 摘要 |
Affords a Group-III nitride crystal substrate that is of low dislocation density and is inexpensive to manufacture, a method of manufacturing such a substrate, and Group-III nitride semiconductor devices that incorporate the Group-III nitride crystal substrate. The Group-III nitride crystal substrate manufacturing method includes: a step of growing, by liquid-phase epitaxy, a first Group-III nitride crystal (2) onto a base substrate (1); and a step of growing, by vapor-phase epitaxy, a second Group-III nitride crystal (3) onto the first Group-III nitride crystal (2). The Group-III nitride crystal substrate, produced by such a manufacturing method, has a dislocation density of 1 × 10 7 dislocations/cm 2 . |
| 申请公布号 |
EP1557870(A2) |
申请公布日期 |
2005.07.27 |
| 申请号 |
EP20050000505 |
申请日期 |
2005.01.12 |
| 申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
HIROTA, RYU;NAKAHATA, SEIJI;UENO, MASAKI |
| 分类号 |
H01L21/20;H01L21/205;C30B7/10;C30B9/10;C30B19/02;C30B25/18;C30B29/40;H01L21/02;H01L21/208;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/20 |
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