发明名称 Semiconductor device
摘要 A semiconductor device includes a semiconductor substrate, an insulating layer, an inductor, a guard ring and a potential-applying line. The insulating layer is formed on the semiconductor substrate. The inductor is formed on the insulating layer. The guard ring is formed in the semiconductor substrate, surrounding the inductor and being a closed ring composed of waving segments connected, end to end. The potential-applying line applies a predetermined potential to the guard ring.
申请公布号 US6921959(B2) 申请公布日期 2005.07.26
申请号 US20030723477 申请日期 2003.11.25
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 WATANABE KENTARO
分类号 H01L27/04;H01L21/02;H01L21/822;H01L23/522;H01L23/58;(IPC1-7):H01L29/00 主分类号 H01L27/04
代理机构 代理人
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