| 摘要 |
A semiconductor device which IGBT (Z 1 ) and a control circuit (B 1 ) for driving the IGBT (Z 1 ) are formed on the same semiconductor substrate by using a junction isolation technology, includes an input terminal (P 1 ) for inputting a drive signal of the IGBT (Z 1 ), a Schottky barrier diode (D 2 ) having an anode connected to the input terminal (P 1 ) and a cathode connected to an input terminal (B 11 ) of the control circuit (B 1 ), and a p-channel MOSFET (T 1 ) for shorting both ends of the Schottky barrier diode (D 2 ) when the voltage of the drive signal input to the input terminal (P 1 ) is higher than a predetermined voltage, thereby latch-up of the parasitic element is prevented and a transmission loss of the input signal can be reduced.
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