Post plasma clean process for a hardmask

摘要

The present invention provides a process of manufacturing a semiconductor device that comprises a process of manufacturing a semiconductor device that includes plasma etching 250 through a patterned hardmask layer 210 located over a semiconductor substrate 225 wherein the plasma etching forms a modified layer 210 a on the hardmask layer 210 , and removing at least a substantial portion of the modified layer 210 a by exposing the modified layer 210 a to a post plasma clean process.