| 摘要 |
The invention concerns a bidirectional electronic switch of the pulse-controlled bistable type comprising a monolithic semiconductor circuit including a vertical bidirectional switch structure (TR; ACS) provided with a gate terminal (G 1 ), first (Th 1 ) and second (Th 2 ) thyristor structures whereof the anodes are formed on the front face side, the first thyristor anode region containing a supplementary P-type region ( 6 ), and a metallization (A 1, A 2 ) connected to the main surface of the front face of the vertical bidirectional component and to the second thyristor anode; a capacitor (C) connected to the first thyristor anode and to the second thyristor supplementary N-type region; and a switch (SW) for short-circuiting the capacitor.
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