发明名称 |
Gas laser apparatus for lithography |
摘要 |
The present invention relates to a long pulse gas laser apparatus for lithography further improved in the laser oscillation efficiency and stability increased by addition of xenon gas. A gas laser apparatus for lithography has a pair of discharge electrodes 2 provided in a laser chamber 1 and emits laser beam having a laser pulse width (T<SUB>is</SUB>) of not less than 40 ns by exciting a laser gas sealed in the laser chamber 1 by electric discharge between the pair of discharge electrodes 2 , the laser gas containing xenon in an amount not less than 2 ppm and not more than 100 ppm in partial pressure ratio. The laser gas has been heated at least when the laser beam is emitted.
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申请公布号 |
US6922428(B2) |
申请公布日期 |
2005.07.26 |
申请号 |
US20030394473 |
申请日期 |
2003.03.20 |
申请人 |
GIGAPHOTON INC. |
发明人 |
TANAKA SATOSHI;KAKIZAKI KOUJI;SASAKI YOUICHI |
分类号 |
G03F7/20;H01S3/036;H01S3/08;H01S3/097;H01S3/0975;H01S3/102;H01S3/104;H01S3/22;H01S3/225;(IPC1-7):H01S3/22;H01S3/09 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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