发明名称 Gas laser apparatus for lithography
摘要 The present invention relates to a long pulse gas laser apparatus for lithography further improved in the laser oscillation efficiency and stability increased by addition of xenon gas. A gas laser apparatus for lithography has a pair of discharge electrodes 2 provided in a laser chamber 1 and emits laser beam having a laser pulse width (T<SUB>is</SUB>) of not less than 40 ns by exciting a laser gas sealed in the laser chamber 1 by electric discharge between the pair of discharge electrodes 2 , the laser gas containing xenon in an amount not less than 2 ppm and not more than 100 ppm in partial pressure ratio. The laser gas has been heated at least when the laser beam is emitted.
申请公布号 US6922428(B2) 申请公布日期 2005.07.26
申请号 US20030394473 申请日期 2003.03.20
申请人 GIGAPHOTON INC. 发明人 TANAKA SATOSHI;KAKIZAKI KOUJI;SASAKI YOUICHI
分类号 G03F7/20;H01S3/036;H01S3/08;H01S3/097;H01S3/0975;H01S3/102;H01S3/104;H01S3/22;H01S3/225;(IPC1-7):H01S3/22;H01S3/09 主分类号 G03F7/20
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