| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the problem inherent in a conventional semiconductor light emitting element structure that, for the emission into the air of a light generated by an active layer, the incident angle of the light from the semiconductor layer into the air has to be not wider than the critical angle, and that the light cannot be emitted into the air but is totally reflected when the incident angle is wider than the critical angle, with the refractive index of light emitting element-constituting materials such as a group III nitride-based compound semiconductor being considerably higher than that of the air. <P>SOLUTION: The semiconductor light emitting element that solves the problem comprises a substrate and at least a first semiconductor layer, an active layer, and a second semiconductor layer, successively formed on the substrate. The second semiconductor layer is different in polarity from the first semiconductor layer; and the total area of the first semiconductor layer, the active layer, and the second semiconductor layer on the side face with the active layer exposed therein accounts for ≥5% of the area of the upper surface of the semiconductor light emitting element exposed on the side of the second semiconductor layer. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
