| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of adjusting a critical dimension of a measured pattern if the measured pattern has a CD deviation in a photolithography process. SOLUTION: For correcting the CD, the CD deviation in the photolithography process is measured first and a transparent substrate of a photomask is etched by the CD deviation to a dimension smaller than the wavelengthλof an exposure source of the photolithography process to form a recess, an undercut, or an isotropic groove in a photomask. The recess, undercut, a vertical groove, an isotropic groove, a recessed vertical groove, and/or a recessed isotropic groove are formed. COPYRIGHT: (C)2005,JPO&NCIPI |
