发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PROBLEM TO BE SOLVED: To efficiently remove power noise, to improve a characteristic of IC, to reduce external bypass capacitors or to reduce capacity, to reduce the mounting area of an IC package, and to reduce external component cost and fitting cost by using a structure of an IO cell. SOLUTION: A bypass capacitor is formed on the IO cell arranged at the peripheral part of the IC chip with MIM capacitances (73, 74, 75) and (83, 84, 85). The bypass capacitors are directly formed on a VDD power wiring 9 and a VSS power wiring 10 inside the IC chip. Thus, power noise can efficiently be removed, the characteristic of IC can be improved, and the external bypass capacitors can be reduced or capacity can be reduced with such constitution. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005197401(A) 申请公布日期 2005.07.21
申请号 JP20040001008 申请日期 2004.01.06
申请人 RICOH CO LTD 发明人 MUKAI SHINPEI
分类号 H01L27/04;H01L21/822;(IPC1-7):H01L21/822 主分类号 H01L27/04
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