| 摘要 |
When the film thickness of an insulating film on a fuse connected to a circuit is not uniform within a wafer surface, there was a problem that disconnection of the fuse might become insufficient due to the insufficient intensity of a laser or disconnection of even an adjacent fuse due to excessive laser irradiation might occur. Further, a problem also occurred that after disconnection of the fuse, moisture entered from exterior through the region in which the fuse has been disconnected, so that the quality of a film underlying the fuse was adversely affected. After a SiON film, a SiN film, and a SiO<SUB>2 </SUB>film have been formed to cover the fuse in this stated order, etching is performed to the SiN film, which is an etching stopper film. The SiON film having a uniform and desired film thickness is thereby formed on the fuse. Further, by providing a guard ring embedded in an insulating film underlying the fuse or fuses and formed to surround the periphery of the fuse or fuses, entry of the moisture from the outside through the region in which the fuse has been disconnected can be prevented.
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