| 摘要 |
Disclosed is an amorphous iron-silicide film fully exhibiting semiconductor characteristics close to those of beta-FeSi<SUB>2</SUB>, which has not been able to be achieved through a conventional cluster ion beam deposition process, molecular beam epitaxial growth process, ion implantation process or RF-magnetron sputtering process. FeSi<SUB>2 </SUB>is grown as a non-granular flat or continuous film on a substrate maintained at a temperature of less than 400° C. through a sputtering process under an Ar gas pressure of 5 mTorr or less using a FeSi<SUB>2 </SUB>alloy target having a Fe:Si atomic ratio of 1:2, to obtain an amorphous FeSi<SUB>2 </SUB>film exhibiting semiconductor characteristics. In particular, a facing-targets type is preferable as the sputtering process.
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