| 摘要 |
PROBLEM TO BE SOLVED: To provide a contact plug in a semiconductor device and a method of forming the same that can increase the width of the contact plug except for some portions by maximum capable of preventing an electric field from being concentrated and improving the electrical properties of devices by prohibiting an on-current from being reduced, by connecting a first contact plug by a second contact plug by connecting a raised junction area and a metal wire by a contact plug after the junction region where the contact plug is formed upwardly up to the bottom of a metal wire, or connecting the first contact plug by the second contact plug after the first contact plug of the same area is formed on the junction region up to the bottom of the metal wires. SOLUTION: The contact plug in the semiconductor device is formed on the junction region on the semiconductor device, and the upper part is narrow and the lower part is wide to electrically connect a specified metal wire among upper metal wires to the junction area while dispersing an electric field. COPYRIGHT: (C)2005,JPO&NCIPI |
