| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device wherein electric interference from the outside can be sufficiently reduced and a capacitive element demonstrating an optional characteristic can be formed. SOLUTION: The semiconductor device is provided with a semiconductor substrate 1 including a main surface 1a, a plurality of wires 11 that are formed in a specified capacitance formation area 22 on the main surface 1a and extend in a specified direction, a plurality of wires 12 that are adjacent to wires 11p arranged around the periphery of the capacitance formation area 22 and extend in a specified direction at a fixed potential, and insulator layers 5 that are formed on the main surface 1a and fill among the wires 11 and between the adjacent wires 11 and the wires 12. The wires 11 and 12 are arranged at a nearly equal spacing in a plane 21 parallel to the main surface 1a, and are arranged side by side in a direction at nearly right angles to a specified direction. COPYRIGHT: (C)2005,JPO&NCIPI |
