| 摘要 |
PROBLEM TO BE SOLVED: To restore the reduction of an impurity concentration in an element isolation region while suppressing the increase of the number of steps. SOLUTION: An element isolation insulating film 5 is formed on a semiconductor substrate 1 by wet-oxidizing the substrate 1 via an opening 4. Thereafter, heat treatment to the substrate 1 having the element isolation insulating film 5 formed thereon is carried out at a temperature higher than a wet oxidization temperature to thereby restore the reduction of an impurity concentration under the insulating film 5. COPYRIGHT: (C)2005,JPO&NCIPI
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