| 摘要 |
PROBLEM TO BE SOLVED: To suppress particles from being sprinkled or stuck to exert inverse influences upon an etching target, speedily without using any mechanical technique. SOLUTION: The plasma etching apparatus comprises a vacuum chamber 1 and an exhaustion section 7 for exhausting the inside of the vacuum chamber 1, and makes into plasma etching gases introduced into the vacuum chamber 1 to perform dry etching upon an etching target 13 in the vacuum chamber 1. A gas emission section 12 which emits gases towards the exhaustion section 7 is provided in a lower part within the vacuum chamber 1. Just after etching end, gases are emitted from the gas emission section 12 to suppress particles from being sprinkled or stuck on the etching target 13. Thus, a conventional cover storage chamber can be emitted, thereby saving the space for the chamber and improving throughput. COPYRIGHT: (C)2005,JPO&NCIPI
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