| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which the resistance of a gate leading-out electrode part is good without deterioration of characteristics, and to provide a method of manufacturing the same. SOLUTION: The semiconductor device includes a structure that only the terminating part of a gate leading-out electrode having the trench gate (a part overlapping a polysilicon on the trench gate) of a power MOSFET is formed in the structure of an oxide film by a gate leading-out electrode (polysilicon)/gate oxide film/an oxide film or a gate leading-out electrode (polysilicon)/gate oxide film/oxide film by a CVD method. An active cell is formed in the structure of a gate electrode (polysilicon)/gate oxide film. COPYRIGHT: (C)2005,JPO&NCIPI
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