| 摘要 |
PROBLEM TO BE SOLVED: To provide a band gap reference generator of low voltage and low power, having a quick response. SOLUTION: The band gap reference generator is constituted of a first circuit, a second circuit, and a high impedance control circuit. The first circuit includes a first type first MOS transistor, a second type first MOS transistor, and a first bipolar junction transistor. The second circuit is constituted of a first type second MOS transistor, a second type second MOS transistor, resistor, and a second bipolar junction transistor. The first and second circuits are arranged so that a current presenting a potential difference between first and second bipolar junctions passing through the resistor. The first type MOS transistor is mirror-arranged. The high impedance control circuit is coupled between a gate and a drain of the first type second MOS transistor. COPYRIGHT: (C)2005,JPO&NCIPI
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