发明名称 |
CONTACTLESS FLASH MEMORY ARRAY |
摘要 |
A method for forming a contactless flash memory cell array is disclosed. According to an embodiment of the invention, a plurality of active regions is formed on a substrate. An insulating layer is then deposited over the active regions, and a portion of the insulating layer is removed to form a one-dimensional slot and to provide access to the active regions. A bit line is then formed in the slot in contact with the active regions. |
申请公布号 |
WO2005067048(A2) |
申请公布日期 |
2005.07.21 |
申请号 |
WO2004US43731 |
申请日期 |
2004.12.22 |
申请人 |
INTEL CORPORATION;LEE, EVERETT, B. |
发明人 |
LEE, EVERETT, B. |
分类号 |
G03F7/20;H01L21/82;H01L21/8247;H01L27/00;H01L27/115;H01L29/76 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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