发明名称 CONTACTLESS FLASH MEMORY ARRAY
摘要 A method for forming a contactless flash memory cell array is disclosed. According to an embodiment of the invention, a plurality of active regions is formed on a substrate. An insulating layer is then deposited over the active regions, and a portion of the insulating layer is removed to form a one-dimensional slot and to provide access to the active regions. A bit line is then formed in the slot in contact with the active regions.
申请公布号 WO2005067048(A2) 申请公布日期 2005.07.21
申请号 WO2004US43731 申请日期 2004.12.22
申请人 INTEL CORPORATION;LEE, EVERETT, B. 发明人 LEE, EVERETT, B.
分类号 G03F7/20;H01L21/82;H01L21/8247;H01L27/00;H01L27/115;H01L29/76 主分类号 G03F7/20
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