发明名称 |
Thin film transistor array panel and manufacturing method thereof |
摘要 |
A method of manufacturing a thin film transistor array panel is provided, which includes: forming a gate line on a substrate; depositing a first insulating layer and a semiconductor layer in sequence on the gate line; depositing a conductive layer on the semiconductor layer; photo-etching the conductive layer and the semiconductor layer; depositing a second insulating layer; photo-etching the second insulating layer to expose first and second portions of the conductive layer; forming a pixel electrode on the first portion of the conductive layer; removing the second portion of the conductive layer to expose a portion of the semiconductor layer; and forming a light blocking member on the exposed portion of the semiconductor layer, the light blocking member having an opening exposing the pixel electrode. |
申请公布号 |
US2005158925(A1) |
申请公布日期 |
2005.07.21 |
申请号 |
US20040008729 |
申请日期 |
2004.12.08 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM HEE-JOON |
分类号 |
G02F1/1368;G02F1/136;G02F1/1362;G03G15/09;G09F9/30;H01L21/00;H01L21/3205;H01L21/336;H01L23/52;H01L29/786;(IPC1-7):G03G15/09 |
主分类号 |
G02F1/1368 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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