| 发明名称 |
SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD |
| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of eliminating damage to a low dielectric constant film received in a machining step. <P>SOLUTION: A porous insulating film 21 is arranged over a semiconductor substrate. A via 23 comprises a conductive material arranged in a via hole 32 formed in the porous insulating film. A first interconnection 22 comprises a conductive material arranged in a wiring groove 31 formed on the viahole in the porous insulating film. A first high-density region 34 is formed in the porous insulating film having a cylindrical shape for surrounding the via hole, having an inner surface common to the boundary of the via hole, and having film density higher than that of the porous insulating film. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
| 申请公布号 |
JP2005197606(A) |
申请公布日期 |
2005.07.21 |
| 申请号 |
JP20040004553 |
申请日期 |
2004.01.09 |
| 申请人 |
TOSHIBA CORP;TOSHIBA MICROELECTRONICS CORP |
发明人 |
YOSHIZAWA TAKAHIKO;MATSUNAGA NORIAKI;NAKAMURA NAOFUMI |
| 分类号 |
H01L23/522;H01L21/768;H01L23/48;H01L23/532;H01L29/40;(IPC1-7):H01L21/768 |
主分类号 |
H01L23/522 |
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