| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for thermodynamically removing oxide on a copper surface, using hafnium as a barrier material, after via-etching in a manufacturing method of semiconductor device. SOLUTION: The method includes a step of forming a copper line embedded in at least one protective insulating layer on a substrate, a step of forming a via hole in at least one protective insulating layer to partially expose the embedded copper line, a step of forming a hafnium layer in the via hole to cover an exposed portion in the embedded copper line with the hafnium layer; and a step of forming a conductive layer on the substrate including the hafnium layer. COPYRIGHT: (C)2005,JPO&NCIPI |
