发明名称 |
METHOD FOR PRODUCING SEMICONDUCTOR DEVICE |
摘要 |
A method for producing a semiconductor device employing an SiC semiconductor substrate (1) in which the SiC semiconductor substrate (1) is mounted on a susceptor (23), a C heating member (3) made of carbon is arranged on the surface of the SiC semiconductor substrate (1), and the susceptor (23) and the C heating member (3) are heated at high temperature, thus forming an impurity region in the surface of the SiC semiconductor substrate (1) by annealing. |
申请公布号 |
WO2005067018(A1) |
申请公布日期 |
2005.07.21 |
申请号 |
WO2004JP19662 |
申请日期 |
2004.12.21 |
申请人 |
ROHM CO., LTD.;MIURA, MINEO |
发明人 |
MIURA, MINEO |
分类号 |
H01L21/265;H01L21/00;H01L21/04;H01L21/324;H01L29/24 |
主分类号 |
H01L21/265 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|