| 摘要 |
A stacked via structure ( 200 ) adapted to transmit high frequency signals or high intensity current through conductive layers of an electronic device carrier is disclosed. The stacked via structure comprises at least three conductive tracks ( 205 a, 205 b, 205 c) belonging to three adjacent conductive layers ( 110 a, 110 b, 110 c) separated by dielectric layers ( 120 ), aligned according to z axis. Connections between these conductive tracks are done with at least two vias ( 210, 215 ) between each conductive layer. Vias connected to one side of a conductive track are disposed such that they are not aligned with the ones connected to the other side according to z axis. In a preferred embodiment, the shape of these aligned conductive tracks looks like a disk or an annular ring and four vias are used to connect two adjacent conductive layers. These four vias are symmetrically disposed on each of said conductive track. The position of the vias between a first and a second adjacent conductive layers and between a second and a third adjacent conductive layers forms an angle of 45° according to z axis. |
