SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A semiconductor device having a high-quality ferroelectric capacitor wherein deterioration of the ferroelectric capacitor is prevented by preventing diffusion of hydrogen or H2O is disclosed. The semiconductor device comprising a ferroelectric capacitor formed on a substrate and a wiring structure formed on the ferroelectric capacitor is characterized in that the wiring structure comprises an interlayer insulating layer and a Cu wiring portion formed in the interlayer insulating layer and that an etching stopper layer including a hydrogen diffusion-preventing layer is so formed as to face the interlayer insulating layer.