| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming metal wiring of a semiconductor device which reduces an RC (resistor and capacitor) delay time and realizes the metal wiring of high reliability, by suppressing a crosstalk phenomenon between the metal wiring and decreasing a capacitance between the metal wires in the next generation high-performance of close integrated semiconductor device, in spite of using aluminum or aluminum alloy inferior in a fundamental material property in comparison with copper as a metal wiring material. SOLUTION: The method includes steps of: forming many thickly gathered metal wiring on a substrate with many contact plugs formed thereon in a reactive ion etching process where a hard mask pattern composed of a low-k dielectric insulator is used, forming a barrier metal layer on the side walls of the many metal wiring; forming an inter-layer insulating layer composed of a low-k dielectric insulator on the whole structure where the barrier metal layer is formed. COPYRIGHT: (C)2005,JPO&NCIPI
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