| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device and semiconductor manufacturing equipment which can prevent partial separation of an insulation layer on an aluminum interconnection and can also prevent a bad outer appearance and a poor reliability. SOLUTION: On a first insulation layer, a metal film for interconnection with aluminum as a chief material is formed by sputtering. On the metal film, a TiN film which is an antireflection film which works in a photolithography process is formed (treatment S1). After finishing the photolithography process, move on to an etching process (treatment S4) wherein a wiring pattern is formed. Thereafter, a resist pattern is removed (treatment S5). Next, the wiring pattern is exposed to gas plasmas containing hydrogen atoms (treatment S6). Then, a second insulation film is formed on the first insulation layer and on the wiring pattern which is now completed as an interconnection layer (threatment S7). COPYRIGHT: (C)2005,JPO&NCIPI
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