MAGNETIC RANDOM ACCESS MEMORY AND ITS DATA READ-OUT METHOD

摘要

PROBLEM TO BE SOLVED: To provide a magnetic random access memory (MRAM) and its data read-out method in which sensing margin can be secured sufficiently and which has strong noise proof. SOLUTION: In the MRAM provided with memory cells C2 including one transistor (third transistor 60) and a MTJ layer (third MTJ layer 58) and a reference cell C1 being reference when data stored in the memory cell C2 is read out, the reference cell C1 includes a first MTJ layer 50 and a second MTJ layer 52 being connected in parallel and a first transistor 54 and a second transistor 56 being connected in parallel, The first transistor 54 and the second transistor 56 are connected respectively to the first MTJ layer 50 and the second MTJ layer 52 in series. The first transistor 54 and the second transistor 56 may be replaced by one transistor having drive capability corresponding to twice of drive capability of the transistor 60 of the memory cell C2. COPYRIGHT: (C)2005,JPO&NCIPI