THIN FILM DEPOSITION APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a thin film deposition apparatus having high film deposition rate capable of controlling the film thickness with high accuracy at the unit of several nm to≤1 nm without degrading the film performance. SOLUTION: In the thin film deposition apparatus, a discharge space is formed by applying high frequency electric field between electrodes facing each other under the atmospheric pressure or the pressure in a vicinity of the atmospheric pressure, discharge gas containing film deposition gas to be fed in the discharge space is excited, and a thin film is deposited on a substrate by exposing the substrate to the excited gas. The thin film deposition apparatus has at least two film deposition zones or film deposition modes capable of providing different film deposition conditions. COPYRIGHT: (C)2005,JPO&NCIPI