PRODUCTION METHOD FOR GROUP III NITRIDE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide a method for producing a group III nitride crystal with a large area and a low dislocation at an increased growth rate. SOLUTION: The production method causes a group III nitride crystal to grow on a substrate 2 by supplying the vapor 4a of a group III element and the vapor 5a of an alkali metal into a nitrogen-containing atmosphere wherein the substrate 2 is placed. Here a first vessel 3a and a second vessel 3b are installed in the above atmosphere; the vapor 4a of the group III element is generated from a melt 4 of the group III element housed in the first vessel 3a; and the vapor 5a of the alkali metal is generated from a melt 5 of the alkali metal housed in the second vessel 3b. COPYRIGHT: (C)2005,JPO&NCIPI