发明名称 |
Non-volatile memory cell comprising a dielectric layer and a phase change material in series |
摘要 |
The invention provides for a nonvolatile memory cell comprising a dielectric material in series with a phase change material, such as a chalcogenide. Phase change is achieved in chalcogenide memories by thermal means. Concentrating thermal energy in a relatively small volume assists this phase change. By applying high voltage across a dielectric layer, dielectric breakdown occurs, forming a low-resistance rupture region traversing the dielectric layer. This rupture region can serve to concentrate thermal energy in a phase-change memory cell. In a preferred embodiment, such a cell can be used in a monolithic three dimensional memory array.
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申请公布号 |
US2005158950(A1) |
申请公布日期 |
2005.07.21 |
申请号 |
US20050040255 |
申请日期 |
2005.01.19 |
申请人 |
MATRIX SEMICONDUCTOR, INC. |
发明人 |
SCHEUERLEIN ROY E.;HERNER S. B. |
分类号 |
G11C7/00;G11C11/39;G11C17/16;H01L21/336;H01L21/82;H01L27/24;H01L29/73;H01L45/00;(IPC1-7):H01L21/336 |
主分类号 |
G11C7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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