| 摘要 |
The present invention relates to a high quality nitride semiconductor thin film and a method for growing the same. According to the present invention, mask material film patterns made of a dielectric or metallic material are formed on a substrate, the mask material film patterns are removed before coalescence is made while growing a nitride semiconductor thin film, and the nitride semiconductor thin film is laterally grown again. Thus, there is an advantage in that it is possible to grow a flat nitride semiconductor thin film with voids and fewer defects.
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