发明名称 DIAPHRAGM VALVE FOR ATOMIC LAYER DEPOSITION
摘要 Diaphragm valves (200) for use in an atomic layer deposition (ALD) system are disclosed. In one embodiment, a heating body (290) forms a thermally conductive pathway between the diaphragm (220) and the valve body (210) to help maintain an operating temperature at the diaphragm and inhibit condensation or freezing of high-temperature ALD precursor gases in the valve passage (214). In another embodiment, a pressure vent (302, 306, 310) communicating with an enclosed space (296) behind the diaphragm reduces resistance to transitioning of the diaphragm between the open and closed positions. In some implementations, a pump or other source of suction (316) is coupled to the pressure vent to reduce fluid pressure in the enclosed space. In yet another embodiment, a valve seat (230) includes an annular seating surface that surrounds an inlet (216) of the valve and contacts a substantial portion of one side of the diaphragm when closed, to facilitate heat transfer and counteract dissipative cooling of the diaphragm.
申请公布号 WO2005003605(A3) 申请公布日期 2005.07.21
申请号 WO2004US20916 申请日期 2004.06.28
申请人 PLANAR SYSTEMS, INC.;MAULA, JARMO, ILMARI;LESKINEN, HANNU;LANG, TEEMU;KUOSMANEN, PEKKA;HAERKOENEN, KARI;AITCHISON, BRADLEY, J. 发明人 MAULA, JARMO, ILMARI;LESKINEN, HANNU;LANG, TEEMU;KUOSMANEN, PEKKA;HAERKOENEN, KARI;AITCHISON, BRADLEY, J.
分类号 F16K7/14;F16K31/06;F16K49/00 主分类号 F16K7/14
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