<p>The present invention concerns new methods of fabricating a silicon material comprising phosphorus. The methods allow high levels of phosphorus to be combined with the silicon. In one aspect of the invention a sample of phosphorus is surrounded with a sample of silicon. At least some of the phosphorus is then vaporised and caused to interact with the silicon.</p>
申请公布号
WO2005066073(A1)
申请公布日期
2005.07.21
申请号
WO2004GB05243
申请日期
2004.12.15
申请人
PSIMEDICA LIMITED;DUNKLEY, JOHN, JOSEPH;TELFORD, BRETT;CONNOR, STEPHEN, EDWARD
发明人
DUNKLEY, JOHN, JOSEPH;TELFORD, BRETT;CONNOR, STEPHEN, EDWARD