SEMICONDUCTOR DEVICE AND ITS FABRICATION PROCESS

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device capable of enhancing the withstand voltage, and to provide its fabrication process. SOLUTION: On an N+conductivity type silicon substrate 2 forming a drain region, a semiconductor layer 13 having a so-called super junction structure formed thereon is provided. The semiconductor layer 13 includes an N-conductivity type drift layer 3 and a P-conductivity type reduced surface layer 9 wherein the drift layer 3 and the reduced surface layer 9 are arranged to appear alternately in the direction parallel with the silicon substrate 2. The drift layer 3 creeps under the reduced surface layer 9 (between the silicon substrate 2 and the reduced surface layer 9). More specifically, the reduced surface layer 9 is separated from the silicon substrate 2 by the drift layer 3 and does not touch the silicon substrate 2. COPYRIGHT: (C)2005,JPO&NCIPI