发明名称 RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN
摘要 <P>PROBLEM TO BE SOLVED: To provide a resist composition for improving fine resolution, LER and depth of focus, and to provide a method for forming a resist pattern which uses the resist composition. <P>SOLUTION: The resist composition contains (A) a resin component whose alkali solubility is changed by the action of acid, and (B) an acid generator component which generates an acid through exposure, wherein the component (A) is a resin with a mass average molecular weight of &le;8,000 which contains a constitutional unit (a) derived from a (meth)acrylate, and the component (B) contains at least one kind of sulfonium compound, represented by general formula (b-1) or (b-2). <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005196095(A) 申请公布日期 2005.07.21
申请号 JP20040057448 申请日期 2004.03.02
申请人 TOKYO OHKA KOGYO CO LTD 发明人 HANEDA HIDEO;TAKESHITA MASARU;HAYASHI RYOTARO;MATSUMARU SHOGO;HIRAYAMA HIROSHI;SHIMIZU HIROAKI
分类号 G03F7/039;G03F7/004;H01L21/027 主分类号 G03F7/039
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