METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To appropriately control the trench formation process in a semiconductor manufacturing method. SOLUTION: The laminated film of a pad oxide film 12 and a silicon nitride film 13 is deposited on a silicon substrate 11, and a polysilicon film 14 is formed on the laminated film. The polysilicon film 14, the silicon nitride film 13, and the pad oxide film 12 are successively etched through a resist mask 15. The silicon substrate 11 is then etched for the formation of a trench 16 with the polysilicon film 14 serving as the mask. COPYRIGHT: (C)2005,JPO&NCIPI