| 摘要 |
PROBLEM TO BE SOLVED: To correct shading by making a most sensitive photoelectric conversion area in a peripheral pixel area to be more sensitive than that in a central pixel area, in respective pixel areas of a solid state imaging device. SOLUTION: The solid state imaging device 1 includes three or more pixel areas 21 at least in one direction among two different directions along the main surface of a semiconductor substrate 11, and a plurality of photoelectric conversion areas 31 in the respective pixel areas 21. The photoelectric conversion areas 31 provided in the pixel areas 21 are different in sensitivity from each other. Most sensitive photoelectric conversion areas 311-B' and 311-B'' in a peripheral pixel area 21s in the respective pixel areas 21 are made more sensitive than a most sensitive photoelectric conversion area 311-B in a central pixel area 21c in the respective pixel areas 21. COPYRIGHT: (C)2005,JPO&NCIPI
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